- 专利标题: Method of forming a metal silicide transparent conductive electrode
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申请号: US14828663申请日: 2015-08-18
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公开(公告)号: US10147839B2公开(公告)日: 2018-12-04
- 发明人: Jeffrey P. Gambino , Derrick Liu , Daniel S. Vanslette
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb & Riley, LLC
- 代理商 Steven J. Meyers
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01L31/0224 ; H01L33/00 ; H01L33/42 ; H01L51/00 ; B82Y10/00 ; B82Y30/00 ; H01B1/24 ; H05K3/10
摘要:
A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in a disorderly arrangement on a substrate. The metal silicide nanowire network can be formed by applying a solution that contains silicon nanowires onto the substrate, forming a metal layer on the silicon nanowires, and performing a silicidation anneal such that the metal silicide nanowires are fused together in a disorderly arrangement, forming a mesh. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.
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