- 专利标题: Measuring method, apparatus and substrate
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申请号: US13306668申请日: 2011-11-29
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公开(公告)号: US10151987B2公开(公告)日: 2018-12-11
- 发明人: David Deckers , Franciscus Godefridus Casper Bijnen , Sami Musa
- 申请人: David Deckers , Franciscus Godefridus Casper Bijnen , Sami Musa
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G01N21/86
- IPC分类号: G01N21/86 ; G03F7/20 ; G03F1/42 ; G03F1/70 ; G03F1/44 ; G03F9/00
摘要:
A pattern formed on a substrate includes first and second sub-patterns positioned adjacent one another and having respective first and second periodicities. The pattern is observed to obtain a combined signal which includes a beat component having a third periodicity at a frequency lower than that of the first and second periodicities. A measurement of performance of the lithographic process is determined by reference to a phase of the beat component. Depending how the sub-patterns are formed, the performance parameter might be critical dimension (CD) or overlay, for example. For CD measurement, one of the sub-patterns may comprise marks each having of a portion sub-divided by product-like features. The measurement can be made using an existing alignment sensor of a lithographic apparatus. Sensitivity and accuracy of the measurement can be adjusted by selection of the first and second periodicities, and hence the third periodicity.
公开/授权文献
- US20120133938A1 MEASURING METHOD, APPARATUS AND SUBSTRATE 公开/授权日:2012-05-31
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