- 专利标题: Sensing and detection of ESD and other transient overstress events
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申请号: US15166683申请日: 2016-05-27
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公开(公告)号: US10164426B2公开(公告)日: 2018-12-25
- 发明人: Michael A. Stockinger , Gregory C. Edgington , James R. Feddeler , Xiang Li , Richard W. Moseley , Mihir Suchak
- 申请人: FREESCALE SEMICONDUCTOR, INC.
- 申请人地址: US TX Austin
- 专利权人: NXP USA, Inc.
- 当前专利权人: NXP USA, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; H02H9/04 ; H02H1/00 ; G01R31/28 ; H01L21/66 ; G01R31/00 ; H01L27/02
摘要:
An integrated circuit includes an I/O pad and a protection device coupled to the I/O pad and a first supply node. A transient event detector includes a latch; a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to a first supply node, and a second current electrode coupled to a data input of the latch, wherein the latch is configured to store an indication that a transient event occurred. An event level sensor includes a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to the protection device, and a second current electrode coupled to a load circuit; a rectifier device coupled between the second current electrode and a capacitor; a second transistor having a control electrode coupled to the capacitor; and an output circuit configured to place a current on a first sense bus proportional to a current through the load circuit.
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