Invention Grant
- Patent Title: Focused ion beam apparatus
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Application No.: US15256967Application Date: 2016-09-06
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Publication No.: US10176964B2Publication Date: 2019-01-08
- Inventor: Yasuhiko Sugiyama , Hiroshi Oba
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2015-176553 20150908
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/10 ; H01J37/18

Abstract:
A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens focusing the ions extracted by the extraction electrode, in which a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through a hole of the condenser lens including the first lens electrode.
Public/Granted literature
- US20170069456A1 FOCUSED ION BEAM APPARATUS Public/Granted day:2017-03-09
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