CHARGED PARTICLE DEVICE, CHARGED PARTICLE ASSESSMENT APPARATUS, MEASURING METHOD, AND MONITORING METHOD

    公开(公告)号:US20240339292A1

    公开(公告)日:2024-10-10

    申请号:US18748758

    申请日:2024-06-20

    摘要: There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up-beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample. The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up-beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.

    MULTI-BEAM CHARGED PARTICLE SOURCE WITH ALIGHMENT MEANS

    公开(公告)号:US20240096585A1

    公开(公告)日:2024-03-21

    申请号:US17768802

    申请日:2020-10-20

    发明人: Pieter KRUIT

    IPC分类号: H01J37/147 H01J37/10

    CPC分类号: H01J37/147 H01J37/10

    摘要: Disclosed are an apparatus and method for generating a plurality of substantially collimated charged particle beamlets. The apparatus includes a charged particle source for generating a diverging charged particle beam, a beam splitter for splitting the charged particle beam in an array of charged particle beamlets, a deflector array includes an array of deflectors including one deflector for each charged particle beamlet of said array of charged particle beamlets, wherein the deflector array is configured for substantially collimating the array of diverging charged particle beamlets. The apparatus further includes a beam manipulation device configured for generating electric and/or magnetic fields at least in an area between the charged particle source and the deflector array. The apparatus has a central axis, and the beam manipulation device is configured for generating electric and/or magnetic fields substantially parallel to the central axis and substantially perpendicular to the central axis.

    ELECTRON BEAM SYSTEM
    7.
    发明公开

    公开(公告)号:US20230317404A1

    公开(公告)日:2023-10-05

    申请号:US17757133

    申请日:2022-01-26

    发明人: Shuai LI

    摘要: Provided is an electron beam system, including: an electron source, configured to generate an electron beam; a first beam guide, configured to accelerate the electron beam; a second beam guide, configured to accelerate the electron beam; a first control electrode arranged between the first beam guide and the second beam guide, configured to change movement directions of backscattered electrons and secondary electrons generated by the electron beam acting on a specimen to be tested; a first detector arranged between the first beam guide and the first control electrode, configured to receive the backscattered electrons generated by the electron beam acting on the specimen to be tested. The first control electrode according to the embodiments of the present disclosure changes the movement directions of the backscattered electrons and secondary electrons generated by the electron beam generated by the electron source acting on the specimen to be tested, so that the first detector arranged between the first beam guide and the first control electrode can receive pure backscattered electrons generated by the electron beam acting on the specimen to be tested.

    SYSTEMS AND METHODS FOR SIGNAL ELECTRON DETECTION

    公开(公告)号:US20230112447A1

    公开(公告)日:2023-04-13

    申请号:US17910752

    申请日:2021-03-09

    摘要: Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.