A super junction MOSFET device including a semiconductor substrate; a base region provided on a primary surface side of the semiconductor substrate and having impurities of a first conductivity type; a source region that includes a portion of a frontmost surface of the base region and has impurities of a second conductivity type; a gate electrode that penetrates through the base region; a source electrode that is provided on the base region and is electrically connected to the source region; and a front surface region that is provided on an entirety of the frontmost surface of the base region in a region differing from a region where the source region and the gate electrode are provided in the base region, is electrically connected to the source electrode provided on the base region, and has a lower impurity concentration of impurities of the second conductivity type than the source region.