- 专利标题: Thin film transistor array panel with diffusion barrier layer and gate insulation layer and organic light emitting diode display including the same
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申请号: US15237866申请日: 2016-08-16
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公开(公告)号: US10192944B2公开(公告)日: 2019-01-29
- 发明人: Dong Hee Lee , Hyun Ju Kang , Sang Won Shin
- 申请人: SAMSUNG DISPLAY CO., LTD.
- 申请人地址: KR Yongin-si, Gyeonggi-Do
- 专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址: KR Yongin-si, Gyeonggi-Do
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2015-0170781 20151202
- 主分类号: H01L27/32
- IPC分类号: H01L27/32 ; H01L27/12 ; H01L29/49 ; H01L29/423 ; H01L29/51 ; H01L29/786
摘要:
An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.
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