Invention Grant
- Patent Title: Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
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Application No.: US15642673Application Date: 2017-07-06
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Publication No.: US10193064B2Publication Date: 2019-01-29
- Inventor: Tsz W. Chan , D. V. Nirmal Ramaswamy , Qian Tao , Yongjun Jeff Hu , Everett A. McTeer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.
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