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    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    1.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 审中-公开

    公开(公告)号：US20190088867A9

    公开(公告)日：2019-03-21

    申请号：US15882666

    申请日：2018-01-29

    申请人： Micron Technology, Inc.

    发明人： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC分类号： H01L45/00 ,  G11C13/00 ,  H01L27/24

    摘要： Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall

    Phase change memory stack with treated sidewalls
    2.
    发明授权
    Phase change memory stack with treated sidewalls 有权
    具有处理侧壁的相变存储器堆叠

    公开(公告)号：US09281471B2

    公开(公告)日：2016-03-08

    申请号：US14266365

    申请日：2014-04-30

    申请人： Micron Technology, Inc.

    发明人： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

    摘要： Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    摘要翻译： 已经公开了用于制造存储器件的存储器件和方法。 一种这样的存储器件包括形成在字线材料上的第一电极材料。 在第一电极材料上形成选择器装置材料。 第二电极材料形成在选择器装置材料上。 在第二电极材料上形成相变材料。 在相变材料上形成第三电极材料。 粘附物质是等离子体掺杂到存储器堆叠的侧壁中，并且衬垫材料形成在存储器堆叠的侧壁上。 粘附物质与存储器堆叠和侧壁衬套的元件混合以终止元件和侧壁衬套的不满足的原子键。

    Methods of forming memory cells and semiconductor devices
    4.
    发明授权
    Methods of forming memory cells and semiconductor devices 有权

    公开(公告)号：US10418554B2

    公开(公告)日：2019-09-17

    申请号：US16172260

    申请日：2018-10-26

    申请人： Micron Technology, Inc.

    发明人： Tsz W. Chan ,  D. V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun Jeff Hu ,  Everett A. McTeer

    IPC分类号： H01L45/00 ,  H01L27/24

    摘要： A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

    Phase change memory stack with treated sidewalls
    8.
    发明授权
    Phase change memory stack with treated sidewalls 有权
    具有处理侧壁的相变存储器堆叠

    公开(公告)号：US09306159B2

    公开(公告)日：2016-04-05

    申请号：US14266415

    申请日：2014-04-30

    申请人： Micron Technology, Inc.

    发明人： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

    摘要： Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

    摘要翻译： 已经公开了用于制造存储器件的存储器件和方法。 一种这样的方法包括从多个元件形成存储器堆叠。 在存储器堆叠的至少一个侧壁上形成粘附物质，其中粘附物质具有梯度结构，其导致粘附物质与存储器堆叠的元件混合以终止元件的不满足的原子键。 梯度结构还包括在至少一个侧壁的外表面上的粘附物质的膜。 将电介质材料注入到粘附物质的膜中以形成侧壁衬里。

    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    9.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 有权
    相位变化的存储堆栈与处理的SIDEWALLS

    公开(公告)号：US20150318467A1

    公开(公告)日：2015-11-05

    申请号：US14266365

    申请日：2014-04-30

    申请人： Micron Technology, Inc.

    发明人： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

    摘要： Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    摘要翻译： 已经公开了用于制造存储器件的存储器件和方法。 一种这样的存储器件包括形成在字线材料上的第一电极材料。 在第一电极材料上形成选择器装置材料。 第二电极材料形成在选择器装置材料上。 在第二电极材料上形成相变材料。 在相变材料上形成第三电极材料。 粘附物质是等离子体掺杂到存储器堆叠的侧壁中，并且衬垫材料形成在存储器堆叠的侧壁上。 粘附物质与存储器堆叠和侧壁衬套的元件混合以终止元件和侧壁衬套的不满足的原子键。

    SEMICONDUCTOR DEVICES COMPRISING THRESHOLD SWITCHING MATERIALS
    10.
    发明申请
    SEMICONDUCTOR DEVICES COMPRISING THRESHOLD SWITCHING MATERIALS 有权

    公开(公告)号：US20210151676A1

    公开(公告)日：2021-05-20

    申请号：US17162071

    申请日：2021-01-29

    申请人： MICRON TECHNOLOGY, INC.

    发明人： Tsz W. Chan ,  D. V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun J. Hu ,  Everett A. McTeer

    IPC分类号： H01L45/00 ,  H01L27/24

    摘要： A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.