- 专利标题： Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas
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申请号： US15936825申请日： 2018-03-27
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公开(公告)号： US10199284B1公开(公告)日： 2019-02-05
- 发明人: Stephen Lam , Dennis Ciplickas , Tomasz Brozek , Jeremy Cheng , Simone Comensoli , Indranil De , Kelvin Doong , Hans Eisenmann , Timothy Fiscus , Jonathan Haigh , Christopher Hess , John Kibarian , Sherry Lee , Marci Liao , Sheng-Che Lin , Hideki Matsuhashi , Kimon Michaels , Conor O'Sullivan , Markus Rauscher , Vyacheslav Rovner , Andrzej Strojwas , Marcin Strojwas , Carl Taylor , Rakesh Vallishayee , Larg Weiland , Nobuharu Yokoyama
- 申请人： PDF Solutions, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： PDF Solutions, Inc.
- 当前专利权人： PDF Solutions, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 David Garrod
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L27/02 ; H01L23/528 ; H01L23/58 ; H01L29/06
摘要：
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas.
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