Invention Grant
- Patent Title: Stucture for protecting an integrated circuit against electrostatic discharges
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Application No.: US15436819Application Date: 2017-02-19
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Publication No.: US10199368B2Publication Date: 2019-02-05
- Inventor: François Tailliet
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1657160 20160726
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/74 ; H01L29/866 ; H02H9/04

Abstract:
An integrated circuit includes at least one input-output pad and a terminal intended to be connected to a source of a reference potential and further including a protection structure including a thyristor forward-connected between the pad and the terminal. The thyristor includes a first resistor between its cathode gate and the terminal. At least one Zener diode is disposed between the thyristor and the pad. The anode of the Zener diode is connected to the cathode gate of the thyristor and the cathode of the Zener diode is connected to the pad via at least one second resistor. The junction of the Zener diode is different from the junctions of the PNPN structure of the thyristor.
Public/Granted literature
- US20180033878A1 STUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES Public/Granted day:2018-02-01
Information query
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