A method of manufacturing an electronic device for providing galvanic isolation includes forming a dielectric layer on a semiconductor body and integrating, in the dielectric layer, a galvanic isolation module, the integrating including forming a first metal region at a first height of the dielectric layer. A second metal region is formed at a second height greater than the first height of the dielectric layer, the first and second metal regions being at least one of capacitively and magnetically coupleable together. Forming the second metal region includes etching selective portions of the dielectric layer to form at least one trench having a side wall coupled to a bottom wall through rounded surface portions, and filling each trench with metal material to form the second metal region having rounded edges.