Invention Grant
- Patent Title: Semiconductor device capable of high-voltage operation
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Application No.: US15411099Application Date: 2017-01-20
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Publication No.: US10199496B2Publication Date: 2019-02-05
- Inventor: Cheng-Hua Lin , Yan-Liang Ji , Chih-Wen Hsiung
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/40 ; H01L27/06 ; H01L49/02
Abstract:
A semiconductor device capable of high-voltage operation includes a semiconductor substrate, a first well region, a second well region, a first gate structure, a first doped region, a second doped region, and a second gate structure. The first well region is formed in a portion of the semiconductor substrate. The second well region is formed in a portion of the first well region. The first gate structure is formed over a portion of the second well region and a portion of the first well region. The first doped region is formed in a portion of the second well region. The second doped region is formed in a portion of the first well region. The second gate structure is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.
Public/Granted literature
- US20170263764A1 SEMICONDUCTOR DEVICE CAPABLE OF HIGH-VOLTAGE OPERATION Public/Granted day:2017-09-14
Information query
IPC分类:
