公开(公告)号：US10541328B2

公开(公告)日：2020-01-21

申请号：US16225077

申请日：2018-12-19

Applicant: MEDIATEK INC.

Inventor： Cheng-Hua Lin ,  Yan-Liang Ji ,  Chih-Wen Hsiung

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/40 ,  H01L27/06 ,  H01L49/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

公开(公告)号：US10199496B2

公开(公告)日：2019-02-05

申请号：US15411099

申请日：2017-01-20

Applicant: MEDIATEK INC.

Inventor： Cheng-Hua Lin ,  Yan-Liang Ji ,  Chih-Wen Hsiung

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/40 ,  H01L27/06 ,  H01L49/02

Abstract: A semiconductor device capable of high-voltage operation includes a semiconductor substrate, a first well region, a second well region, a first gate structure, a first doped region, a second doped region, and a second gate structure. The first well region is formed in a portion of the semiconductor substrate. The second well region is formed in a portion of the first well region. The first gate structure is formed over a portion of the second well region and a portion of the first well region. The first doped region is formed in a portion of the second well region. The second doped region is formed in a portion of the first well region. The second gate structure is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.