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    Semiconductor device capable of high-voltage operation
    2.
    发明授权
    Semiconductor device capable of high-voltage operation 有权

    公开(公告)号：US10199496B2

    公开(公告)日：2019-02-05

    申请号：US15411099

    申请日：2017-01-20

    Applicant: MEDIATEK INC.

    Inventor： Cheng-Hua Lin ,  Yan-Liang Ji ,  Chih-Wen Hsiung

    IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/40 ,  H01L27/06 ,  H01L49/02

    Abstract: A semiconductor device capable of high-voltage operation includes a semiconductor substrate, a first well region, a second well region, a first gate structure, a first doped region, a second doped region, and a second gate structure. The first well region is formed in a portion of the semiconductor substrate. The second well region is formed in a portion of the first well region. The first gate structure is formed over a portion of the second well region and a portion of the first well region. The first doped region is formed in a portion of the second well region. The second doped region is formed in a portion of the first well region. The second gate structure is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

    Semiconductor device capable of high-voltage operation
    5.
    发明授权
    Semiconductor device capable of high-voltage operation 有权

    公开(公告)号：US10541328B2

    公开(公告)日：2020-01-21

    申请号：US16225077

    申请日：2018-12-19

    Applicant: MEDIATEK INC.

    Inventor： Cheng-Hua Lin ,  Yan-Liang Ji ,  Chih-Wen Hsiung

    IPC: H01L29/00 ,  H01L29/78 ,  H01L29/40 ,  H01L27/06 ,  H01L49/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, a first well region formed in a portion of the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A second well region is formed in a portion of the first well region, having the first conductivity type. A first gate structure is formed over a portion of the second well region and a portion of the first well region. A first doped region is formed in a portion of the second well region. A second doped region is formed in a portion of the first well region, having the second conductivity type. A second dielectric layer is formed over a portion of the first gate structure, a portion of the first well region, and a portion of the second doped region.

    ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF 审中-公开
    电子元器件及其制造方法

    公开(公告)号：US20170047398A1

    公开(公告)日：2017-02-16

    申请号：US15206399

    申请日：2016-07-11

    Applicant: MEDIATEK Inc.

    Inventor： Yan-Liang Ji ,  Cheng-Hua Lin ,  Puo-Yu Chiang

    IPC: H01L29/06 ,  H01L21/768 ,  H01L29/423 ,  H01L29/36 ,  H01L23/535

    CPC classification number: H01L29/0653 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42356 ,  H01L29/7835

    Abstract: The electronic component includes a semiconductor substrate, a first doped region, a second doped region, a gate structure, a dielectric layer and a conductive portion. The semiconductor substrate has an upper surface. first doped region embedded in the semiconductor substrate. The second doped region is embedded in the semiconductor substrate. The gate structure is formed on the upper surface. The dielectric layer is formed above the upper surface and located between the first doped region and the second doped region. The conductive portion is formed on the dielectric layer.

    Abstract translation: 电子部件包括半导体基板，第一掺杂区域，第二掺杂区域，栅极结构，电介质层和导电部分。 半导体衬底具有上表面。 第一掺杂区域嵌入在半导体衬底中。 第二掺杂区域嵌入在半导体衬底中。 栅极结构形成在上表面上。 电介质层形成在上表面上方并位于第一掺杂区和第二掺杂区之间。 导电部分形成在电介质层上。

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