Invention Grant
- Patent Title: Semiconductor laser device
-
Application No.: US15433368Application Date: 2017-02-15
-
Publication No.: US10199796B2Publication Date: 2019-02-05
- Inventor: Hideyuki Fujimoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2016-027113 20160216
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01S5/024 ; H01S5/042

Abstract:
A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.
Public/Granted literature
- US20170237227A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2017-08-17
Information query