公开(公告)号：US10734784B2

公开(公告)日：2020-08-04

申请号：US16665299

申请日：2019-10-28

Applicant: NICHIA CORPORATION

Inventor： Hideyuki Fujimoto

IPC: H01S5/022 ,  H01S5/024

Abstract: A semiconductor laser device includes: a housing including: a recess, and a plurality of wiring parts disposed inside the recess; a submount including: a first main surface fixed to a lower upward-facing surface of the recess, and a second main surface opposite to a first main surface, wherein, in a plan view of the semiconductor laser device, the submount is disposed between the first upper upward-facing surface and a second upper upward-facing surface of the recess; a semiconductor laser element; a light reflecting member; a first wire; and a second wire.

公开(公告)号：US11329449B2

公开(公告)日：2022-05-10

申请号：US16918321

申请日：2020-07-01

Applicant: NICHIA CORPORATION

Inventor： Hideyuki Fujimoto

IPC: H01S5/02355 ,  H01S5/024 ,  H01S5/02345 ,  H01S5/02212 ,  H01S5/02255

Abstract: A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the semiconductor laser element.

公开(公告)号：US10199796B2

公开(公告)日：2019-02-05

申请号：US15433368

申请日：2017-02-15

Applicant: NICHIA CORPORATION

Inventor： Hideyuki Fujimoto

IPC: H01S5/022 ,  H01S5/024 ,  H01S5/042

Abstract: A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

公开(公告)号：US12142892B2

公开(公告)日：2024-11-12

申请号：US18338467

申请日：2023-06-21

Applicant: NICHIA CORPORATION

Inventor： Hideyuki Fujimoto

IPC: H01S5/02355 ,  H01S5/02345 ,  H01S5/024 ,  H01S5/02212 ,  H01S5/02255

Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a mounting surface below the first upper upward-facing surface, inner lateral surfaces including a first inner lateral surface and a second inner lateral surface facing the first inner lateral surface, wherein the first upper upward-facing surface and the mounting surface are formed inward of the inner lateral surfaces, and a first wiring part disposed on the first upper upward-facing surface; a semiconductor laser element including: a light output surface, a first lateral surface extending from the light output surface and facing the first inner lateral surface, and a second lateral surface extending from the light output surface and opposite to the first lateral surface; and a first wire connected to the first wiring part for electrical connection of the semiconductor laser element.

公开(公告)号：US20160111854A1

公开(公告)日：2016-04-21

申请号：US14982883

申请日：2015-12-29

Applicant: Nichia Corporation

Inventor： Hideyuki Fujimoto ,  Masatoshi Nakagaki

IPC: H01S5/022 ,  H01S5/024 ,  H01S5/323

CPC classification number: H01S5/02272 ,  H01L24/27 ,  H01L24/31 ,  H01L2224/27005 ,  H01L2224/32113 ,  H01L2224/48091 ,  H01S5/02236 ,  H01S5/02268 ,  H01S5/024 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/32341 ,  H01L2924/00014

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

公开(公告)号：US09780523B2

公开(公告)日：2017-10-03

申请号：US14982883

申请日：2015-12-29

Applicant: Nichia Corporation

Inventor： Hideyuki Fujimoto ,  Masatoshi Nakagaki

IPC: H01S5/022 ,  H01S5/024 ,  H01S5/323 ,  H01L23/00

CPC classification number: H01S5/02272 ,  H01L24/27 ,  H01L24/31 ,  H01L2224/27005 ,  H01L2224/32113 ,  H01L2224/48091 ,  H01S5/02236 ,  H01S5/02268 ,  H01S5/024 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/32341 ,  H01L2924/00014

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

公开(公告)号：US11728617B2

公开(公告)日：2023-08-15

申请号：US17718995

申请日：2022-04-12

Applicant: NICHIA CORPORATION

Inventor： Hideyuki Fujimoto

IPC: H01S5/02355 ,  H01S5/024 ,  H01S5/02345 ,  H01S5/02212 ,  H01S5/02255

CPC classification number: H01S5/02355 ,  H01S5/02345 ,  H01S5/02469 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01S5/02212 ,  H01S5/02255

Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.