- 专利标题: Semiconductor memory device and a chip stack package having the same
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申请号: US15678197申请日: 2017-08-16
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公开(公告)号: US10211123B2公开(公告)日: 2019-02-19
- 发明人: Jong-Pil Son
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si, Gyeonggi-Do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-Do
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2016-0172023 20161215
- 主分类号: H01L23/373
- IPC分类号: H01L23/373 ; H01L23/36 ; H01L25/18 ; H01L27/118 ; H01L27/108 ; H01L23/535 ; H01L23/00 ; H05K1/18 ; H01L21/48 ; H01L23/495 ; H01L23/367 ; H01L23/538 ; H01L25/065 ; H01L23/31 ; H01L23/40
摘要:
A semiconductor memory device includes an integrated circuit (IC) chip structure, wherein the IC chip includes a substrate, a memory cell disposed on the substrate, and a local well disposed on the substrate, wherein a conductivity type of the local well is different from a conductivity type of the substrate, a wiring stack structure disposed on the IC chip structure, wherein the wiring stack structure includes a signal transfer pattern connected to the memory cell through a signal interconnector, and a thermal dispersion pattern connected to the local well through a thermal interconnector, and a heat transfer structure connected to the thermal dispersion pattern for transferring heat to the thermal dispersion pattern from a heat source.
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