Invention Grant
- Patent Title: Display device and manufacturing method thereof
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Application No.: US15678501Application Date: 2017-08-16
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Publication No.: US10211235B2Publication Date: 2019-02-19
- Inventor: Isao Suzumura , Hajime Watakabe , Akihiro Hanada , Hirokazu Watanabe
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Typha IP LLC
- Priority: JP2016-179378 20160914
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L29/423 ; H01L29/66 ; H01L29/786 ; G03F7/00 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368 ; H01L27/32
Abstract:
The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.
Public/Granted literature
- US20180076239A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-03-15
Information query
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