公开(公告)号：US11855103B2

公开(公告)日：2023-12-26

申请号：US17587671

申请日：2022-01-28

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Masayoshi Fuchi

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/7869 ,  H01L29/78603 ,  H01L29/78675

摘要： According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.

公开(公告)号：US11846860B2

公开(公告)日：2023-12-19

申请号：US18164809

申请日：2023-02-06

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Toshihide Jinnai ,  Isao Suzumura ,  Hajime Watakabe ,  Ryo Onodera

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC分类号： G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

摘要： A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US10824211B2

公开(公告)日：2020-11-03

申请号：US16131477

申请日：2018-09-14

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Hajime Watakabe ,  Kazufumi Watabe

IPC分类号： H01L27/12 ,  H04L29/08 ,  H01L29/786 ,  H01L29/423 ,  H01L29/51 ,  G06F1/26 ,  H02J13/00 ,  H04L12/24 ,  H04L12/853 ,  H04Q9/02

摘要： According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

公开(公告)号：US20180342536A1

公开(公告)日：2018-11-29

申请号：US15978464

申请日：2018-05-14

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Yohei Yamaguchi ,  Marina Shiokawa ,  Ryotaro Kimura

IPC分类号： H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1333

CPC分类号： H01L27/124 ,  G02F1/133305 ,  G02F1/134363 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/7869

摘要： The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.

公开(公告)号：US20180286890A1

公开(公告)日：2018-10-04

申请号：US15923026

申请日：2018-03-16

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Yohei Yamaguchi ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Marina Shiokawa

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L21/465 ,  H01L21/4763 ,  H01L29/66

摘要： The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

公开(公告)号：US09911859B2

公开(公告)日：2018-03-06

申请号：US14944711

申请日：2015-11-18

申请人： Japan Display Inc.

发明人： Hajime Watakabe ,  Arichika Ishida ,  Takashi Okada ,  Masayoshi Fuchi ,  Akihiro Hanada

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： According to one embodiment, a thin-film transistor and a method of manufacturing the same achieve size reduction of the thin-film transistor while using an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. A gate electrode is arranged at a position spaced from the channel region of the oxide semiconductor layer so as to face the channel region. A source electrode is electrically connected to the source region of the oxide semiconductor layer. A drain electrode is electrically connected to the drain region of the oxide semiconductor layer. An undercoat layer adjoins the source region and the drain region of the oxide semiconductor layer. A hydrogen blocking layer has a hydrogen concentration lower than that in the undercoat layer and separates the undercoat layer and the channel region of the oxide semiconductor layer.

公开(公告)号：US12108627B2

公开(公告)日：2024-10-01

申请号：US17533127

申请日：2021-11-23

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Kentaro Miura ,  Hajime Watakabe ,  Ryo Onodera

IPC分类号： H01L27/32 ,  H01L51/56 ,  H10K59/121 ,  H10K59/126 ,  H10K71/00 ,  H01L27/12 ,  H01L29/786 ,  H10K59/12 ,  H10K59/123

CPC分类号： H10K59/1213 ,  H10K59/126 ,  H10K71/00 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/1201 ,  H10K59/123

摘要： A display device includes a first transistor having a first semiconductor layer, in which a first source region includes a first region in contact with a first source electrode, and a first drain region includes a second region in contact with a first drain electrode. The first source and drain regions, the first region, and the second region each include a first impurity element. In a region close to an interface between the first semiconductor layer and a first insulating layer, a concentration of the first impurity element included in the first and second regions is higher than a concentration of the first impurity element included in the first source region and the first drain region. A method of manufacturing a display device includes forming a first gate electrode and a light shielding layer on a first insulating layer, and forming a second semiconductor layer on the light shielding layer.

公开(公告)号：US12068399B2

公开(公告)日：2024-08-20

申请号：US17511633

申请日：2021-10-27

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Takashi Okada ,  Tomoyuki Ito ,  Toshiki Kaneko

IPC分类号： H01L29/66 ,  H01L21/385 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

摘要： According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US12025899B2

公开(公告)日：2024-07-02

申请号：US18349217

申请日：2023-07-10

申请人： Japan Display Inc.

发明人： Tatsunori Muramoto ,  Kentaro Kawai ,  Yoshihide Ohue ,  Akihiro Hanada

IPC分类号： G02F1/1368 ,  G02F1/1334 ,  G02F1/1362 ,  H01L27/12

CPC分类号： G02F1/1368 ,  G02F1/1334 ,  G02F1/136286 ,  H01L27/1248

摘要： According to one embodiment, a display device includes a first substrate including a first transparent substrate, a switching element including an oxide semiconductor, an organic insulating film covering the switching element, a transparent electrode including a first aperture penetrating to an upper surface of the organic insulating film, an inorganic insulating film including a second aperture penetrating to the upper surface in the first aperture, and a pixel electrode electrically connected to the switching element, and a second substrate including a second transparent substrate and opposed to the first substrate.

公开(公告)号：US11942484B2

公开(公告)日：2024-03-26

申请号：US17876063

申请日：2022-07-28

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Hajime Watakabe ,  Kazufumi Watabe

IPC分类号： H01L27/12 ,  G06F1/26 ,  H02J13/00 ,  H04L41/069 ,  H04L47/2416 ,  H04L67/12 ,  H01L29/423 ,  H01L29/51 ,  H01L29/786 ,  H04Q9/02

CPC分类号： H01L27/1225 ,  G06F1/26 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1251 ,  H02J13/00 ,  H02J13/00016 ,  H04L41/069 ,  H04L47/2416 ,  H04L67/12 ,  H01L29/42384 ,  H01L2029/42388 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H04Q9/02 ,  H04Q2209/826

摘要： A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.