A bipolar junction transistor is configured to provide electrostatic discharge (ESD) protection for an integrated circuit. The bipolar junction transistor includes a substrate configured to function as a gate for the bipolar junction transistor. At least one drain finger extends in a first direction on a first surface of the substrate and is configured to function as a collector for the bipolar junction transistor. At least one source finger extends in the first direction on the first surface of the substrate and is configured to function as an emitter for the bipolar junction transistor. The at least one source finger includes a pickup region that is configured to set a substrate potential.