Invention Grant
- Patent Title: Semiconductor device assembly with vapor chamber
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Application No.: US14720015Application Date: 2015-05-22
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Publication No.: US10215500B2Publication Date: 2019-02-26
- Inventor: Steven K. Groothuis , Jian Li
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/467
- IPC: H01L23/467 ; H01L25/00 ; H01L23/373 ; H01L25/18 ; H01L21/48 ; F28D15/04 ; H01L23/367 ; H01L23/427 ; F28D15/02 ; H01L23/00 ; H01L25/065

Abstract:
Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die, a second semiconductor die at a base region of the first die, and a thermal transfer device attached to a peripheral region of the first die and extending over the second die. The thermal transfer device includes a conductive structure having an internal cavity and a working fluid at least partially filling the cavity. The conductive structure further includes first and second fluid conversion regions adjacent the cavity. The first fluid conversion region transfers heat from at least the peripheral region of the first die to a volume of the working fluid to vaporize the volume in the cavity, and the second fluid conversion region condenses the volume of the working fluid in the cavity after it has been vaporized.
Public/Granted literature
- US20160343639A1 SEMINCONDUCTOR DEVICE ASSEMBLY WITH VAPOR CHAMBER Public/Granted day:2016-11-24
Information query
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