Systems, methods and/or devices are used to adjust error metrics for a memory portion of non-volatile memory in a storage device. In one aspect, a first write and a first read are performed on the memory portion. In accordance with results of the first read, a first error metric value for the memory portion is determined. In accordance with a determination that the first error metric value exceeds a first threshold value, an entry for the memory portion is added to a table. After the first write, when a second write to the memory portion is performed, it is determined whether the entry for the memory portion is present in the table. In accordance with a determination that the entry for the memory portion is present in the table, the second write uses a first error adjustment characteristic that is determined in accordance with the first error metric value.