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    Hard and soft bit data from single read
    1.
    发明授权
    Hard and soft bit data from single read 有权

    公开(公告)号：US11256567B2

    公开(公告)日：2022-02-22

    申请号：US16907669

    申请日：2020-06-22

    Applicant: SanDisk Technologies LLC

    Inventor： Mostafa El Gamal ,  James Fitzpatrick

    IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52 ,  G11C11/56 ,  G11C16/26

    Abstract: An apparatus includes memory cells programmed to one of a plurality of data states, wherein the memory cells are configured such that the plurality of data states comprise an error-prone data state. Sense circuitry of the apparatus is configured to sense first memory cells programmed to the error-prone data state, determine a bit encoding for the first memory cells, sense other memory cells programmed to other data states, and determine a bit encoding for the other memory cells. A communication circuit of the apparatus is configured to communicate the bit encoding for the other memory cells, the bit encoding for the first memory cells, and an indication that the first memory cells are programmed to the error-prone data state, in response to a single read command from a controller.

    Variable-term error metrics adjustment
    2.
    发明授权
    Variable-term error metrics adjustment 有权

    公开(公告)号：US10228990B2

    公开(公告)日：2019-03-12

    申请号：US15195910

    申请日：2016-06-28

    Applicant: SanDisk Technologies LLC

    Inventor： Yiwei Song ,  Nian Niles Yang ,  James Fitzpatrick

    IPC: G06F11/07 ,  G06F12/02 ,  G11C16/34 ,  G06F11/08 ,  G11C29/44 ,  G11C29/04

    Abstract: Systems, methods and/or devices are used to adjust error metrics for a memory portion of non-volatile memory in a storage device. In one aspect, a first write and a first read are performed on the memory portion. In accordance with results of the first read, a first error metric value for the memory portion is determined. In accordance with a determination that the first error metric value exceeds a first threshold value, an entry for the memory portion is added to a table. After the first write, when a second write to the memory portion is performed, it is determined whether the entry for the memory portion is present in the table. In accordance with a determination that the entry for the memory portion is present in the table, the second write uses a first error adjustment characteristic that is determined in accordance with the first error metric value.

    Variable-Term Error Metrics Adjustment
    10.
    发明申请
    Variable-Term Error Metrics Adjustment 审中-公开

    公开(公告)号：US20170139761A1

    公开(公告)日：2017-05-18

    申请号：US15195910

    申请日：2016-06-28

    Applicant: SanDisk Technologies LLC

    Inventor： Yiwei Song ,  Nian Niles Yang ,  James Fitzpatrick

    IPC: G06F11/07

    CPC classification number: G06F11/073 ,  G06F11/0754 ,  G06F11/076 ,  G06F11/1072 ,  G06F12/02 ,  G11C16/349 ,  G11C29/4401 ,  G11C2029/0409 ,  G11C2029/0411

    Abstract: Systems, methods and/or devices are used to adjust error metrics for a memory portion of non-volatile memory in a storage device. In one aspect, a first write and a first read are performed on the memory portion. In accordance with results of the first read, a first error metric value for the memory portion is determined. In accordance with a determination that the first error metric value exceeds a first threshold value, an entry for the memory portion is added to a table. After the first write, when a second write to the memory portion is performed, it is determined whether the entry for the memory portion is present in the table. In accordance with a determination that the entry for the memory portion is present in the table, the second write uses a first error adjustment characteristic that is determined in accordance with the first error metric value.

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