- 专利标题: Photonic degradation monitoring for semiconductor devices
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申请号: US15425709申请日: 2017-02-06
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公开(公告)号: US10230329B2公开(公告)日: 2019-03-12
- 发明人: Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
- 申请人: SUNPOWER CORPORATION
- 申请人地址: US CA San Jose
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: G01N21/64
- IPC分类号: G01N21/64 ; H02S50/15
摘要:
Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
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