公开(公告)号：US11502208B2

公开(公告)日：2022-11-15

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/20 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0368

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US20220293801A1

公开(公告)日：2022-09-15

申请号：US17829152

申请日：2022-05-31

申请人： Sunpower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Perine Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0747

摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

公开(公告)号：US10665739B2

公开(公告)日：2020-05-26

申请号：US15220273

申请日：2016-07-26

申请人： SUNPOWER CORPORATION

发明人： Seung Bum Rim ,  Gabriel Harley

IPC分类号： H01L31/0443 ,  H01L31/18 ,  H01L27/142 ,  H01L31/02 ,  H01L31/0368

摘要： A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

公开(公告)号：US20190273467A1

公开(公告)日：2019-09-05

申请号：US16298801

申请日：2019-03-11

申请人： SunPower Corporation

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US20230038148A1

公开(公告)日：2023-02-09

申请号：US17971369

申请日：2022-10-21

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  Gabriel Harley

IPC分类号： H01L31/0443 ,  H01L31/18 ,  H01L27/142 ,  H01L31/02 ,  H01L31/0368

摘要： A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

公开(公告)号：US20230033252A1

公开(公告)日：2023-02-02

申请号：US17966649

申请日：2022-10-14

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  Hung-Ming Wang ,  David Okawa ,  Lewis Abra

IPC分类号： H01L31/0352 ,  H01L31/05 ,  H01L31/18 ,  H01L31/0465

摘要： Methods of fabricating solar cells having a plurality of sub-cells coupled by cell level interconnection, and the resulting solar cells, are described herein. In an example, a solar cell includes a plurality of sub-cells. Each of the plurality of sub-cells includes a singulated and physically separated semiconductor substrate portion. Each of the plurality of sub-cells includes an on-sub-cell metallization structure interconnecting emitter regions of the sub-cell. An inter-sub-cell metallization structure couples adjacent ones of the plurality of sub-cells. The inter-sub-cell metallization structure is different in composition from the on-sub-cell metallization structure.

公开(公告)号：US20200335642A1

公开(公告)日：2020-10-22

申请号：US16918218

申请日：2020-07-01

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith

IPC分类号： H01L31/0216 ,  H01L31/0443 ,  H01L31/0224 ,  H01L31/0745 ,  H01L27/142

摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.

公开(公告)号：US20200251601A1

公开(公告)日：2020-08-06

申请号：US16853437

申请日：2020-04-20

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  Michael C. Johnson

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0747

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.

公开(公告)号：US20200075784A1

公开(公告)日：2020-03-05

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/0745 ,  H01L31/068 ,  H01L31/20

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US09825191B2

公开(公告)日：2017-11-21

申请号：US14317686

申请日：2014-06-27

申请人： SUNPOWER CORPORATION

发明人： Michael C. Johnson ,  Kieran Mark Tracy ,  Seung Bum Rim ,  Jara Fernandez Martin ,  Périne Jaffrennou ,  Julien Penaud

IPC分类号： H01L31/0216 ,  H01L31/0236 ,  H01L31/068

CPC分类号： H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  Y02E10/547

摘要： Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.