公开(公告)号：US10804843B2

公开(公告)日：2020-10-13

申请号：US16298801

申请日：2019-03-11

申请人： SunPower Corporation

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US10030303B2

公开(公告)日：2018-07-24

申请号：US14578332

申请日：2014-12-19

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Taiqing Qiu ,  Robert Woehl ,  Kieran Mark Tracy ,  Mukul Agrawal

IPC分类号： C23C14/34 ,  C23C14/50 ,  H01J37/32 ,  C23C14/16

摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.

公开(公告)号：US09997652B2

公开(公告)日：2018-06-12

申请号：US14866239

申请日：2015-09-25

申请人： SUNPOWER CORPORATION

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

公开(公告)号：US20180138354A1

公开(公告)日：2018-05-17

申请号：US15807915

申请日：2017-11-09

申请人： SUNPOWER CORPORATION ,  TOTAL MARKETING SERVICES

发明人： Périne Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Kieran Mark Tracy ,  Taiqing Qiu ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/1864 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/1868

摘要： A curing tool for fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a curing tool combines a UV-exposure stage and one or more of a deposition or an annealing stage to fabricate a solar cell. For example, a radiation curing stage can precede a back end processing stage used to perform operations on a back contact solar cell. The curing tool can therefore be used to perform a method to improve UV stability of solar cells.

公开(公告)号：US20190386158A1

公开(公告)日：2019-12-19

申请号：US16464074

申请日：2017-12-13

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Taiqing Qiu ,  Emeline Soichi ,  Périne Jaffrennou

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/18

摘要： Methods of fabricating solar cells using plasma-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes forming a dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer over the dielectric layer. The method also includes exposing the ARC layer to plasma-induced radiation.

公开(公告)号：US10230329B2

公开(公告)日：2019-03-12

申请号：US15425709

申请日：2017-02-06

申请人： SUNPOWER CORPORATION

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： G01N21/64 ,  H02S50/15

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US20150179838A1

公开(公告)日：2015-06-25

申请号：US14136751

申请日：2013-12-20

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Balu Venkatasubramani

IPC分类号： H01L31/0224 ,  H01L31/20 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

摘要翻译： 描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。 在一个示例中，背接触太阳能电池包括具有受光面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。 第三薄介电层横向地设置在第一和第二多晶硅发射极区之间。 第一导电接触结构设置在第一多晶硅发射极区域上。 第二导电接触结构设置在第二多晶硅发射极区域上。

公开(公告)号：US11101398B2

公开(公告)日：2021-08-24

申请号：US16666055

申请日：2019-10-28

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Périne Jaffrennou ,  Nada Habka ,  Sergej Filonovich

IPC分类号： H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

公开(公告)号：US20200075784A1

公开(公告)日：2020-03-05

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/0745 ,  H01L31/068 ,  H01L31/20

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US10516071B2

公开(公告)日：2019-12-24

申请号：US15419754

申请日：2017-01-30

申请人： SUNPOWER CORPORATION

发明人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Perine Jaffrennou ,  Nada Habka ,  Sergej Filonovich

IPC分类号： H01L31/068 ,  H01L31/0368 ,  H01L31/0236 ,  H01L31/20 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/02

摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.