Invention Grant
- Patent Title: On-chip coupling capacitor with patterned radio frequency shielding structure for lower loss
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Application No.: US15687065Application Date: 2017-08-25
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Publication No.: US10236573B2Publication Date: 2019-03-19
- Inventor: Haitao Cheng , Zhang Jin
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01Q1/52
- IPC: H01Q1/52 ; H01Q1/48 ; H01Q1/22

Abstract:
A capacitor radio frequency (RF) shielding structure may include a ground plane partially surrounding a coupling capacitor in an RF signal path. The ground plane may include a first ground plane portion extending between a positive terminal of the RF signal path and a negative terminal of the RF signal path. The ground plane may include a second ground plane portion extending between the positive terminal and the negative terminal of the RF signal path. The second ground plane portion may be opposed the first ground plane portion. The capacitor RF shielding structure may also include a patterned shielding layer electrically contacting the first ground plane portion and/or the second ground plane portion. The patterned shielding layer may electrically disconnecting a return current path over the patterned shielding layer to confine a return current to flowing over the first ground plane portion or the second ground plane portion.
Public/Granted literature
- US20180366822A1 ON-CHIP COUPLING CAPACITOR WITH PATTERNED RADIO FREQUENCY SHIELDING STRUCTURE FOR LOWER LOSS Public/Granted day:2018-12-20
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