- 专利标题: Bit-order modification for different memory areas of a storage device
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申请号: US15475666申请日: 2017-03-31
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公开(公告)号: US10236909B2公开(公告)日: 2019-03-19
- 发明人: Rami Rom , Idan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , Idan Alrod , Stella Achtenberg
- 申请人: SanDisk Technologies LLC
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies LLC
- 当前专利权人: SanDisk Technologies LLC
- 当前专利权人地址: US TX Plano
- 代理机构: Dickinson Wright PLLC
- 主分类号: H03M13/11
- IPC分类号: H03M13/11 ; H03M13/00 ; G06F3/06
摘要:
A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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