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1.发明授权公开(公告)号：US10355712B2
公开(公告)日：2019-07-16
申请号：US15475602
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , Idan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , Idan Alrod , Stella Achtenberg
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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公开(公告)号：US10230395B2
公开(公告)日：2019-03-12
申请号：US15475638
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , Idan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , Idan Alrod , Stella Achtenberg
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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公开(公告)号：US20180287636A1
公开(公告)日：2018-10-04
申请号：US15475638
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , ldan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , ldan Alrod , Stella Achtenberg
CPC classification number: H03M13/1125 , G06F3/0619 , G06F3/0655 , G06F3/0688 , H03M13/6566
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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公开(公告)号：US10063258B2
公开(公告)日：2018-08-28
申请号：US15265045
申请日：2016-09-14
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Idan Goldenberg , Ishai Ilani , Alexander Bazarsky , Rami Rom
CPC classification number: H03M13/1154 , G06F11/10 , G06F11/1012 , G06F11/1052 , G06F11/106 , G06F11/1072 , G06F11/1076 , H03M13/1105 , H03M13/1108 , H03M13/353 , H03M13/3715 , H03M13/3723 , H03M13/612 , H03M13/6325
Abstract: In an illustrative example, a method includes sensing at least a portion of a representation of a convolutional low-density parity-check (CLDPC) codeword stored at a memory of a data storage device. The method further includes receiving the portion of the representation of the CLDPC codeword at a controller of the data storage device. The method further includes performing one or more management operations associated with the memory based on an estimated number of errors of the portion of the representation of the CLDPC codeword.
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Patent Agency Ranking
公开(公告)号：US10275186B2
公开(公告)日：2019-04-30
申请号：US14927877
申请日：2015-10-30
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Eran Sharon , Ishai Ilani , Idan Alrod , Ariel Navon , Rami Rom
Abstract: A data storage device includes a shaping engine and a compression engine. The shaping engine is configured to shape first data to generate second data. The compression engine is configured to compress the second data to generate third data.
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公开(公告)号：US20180287632A1
公开(公告)日：2018-10-04
申请号：US15475666
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , ldan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , ldan Alrod , Stella Achtenberg
CPC classification number: H03M13/11 , G06F3/0619 , G06F3/0655 , G06F3/0688 , H03M13/1125 , H03M13/6566
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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公开(公告)号：US10567001B2
公开(公告)日：2020-02-18
申请号：US16049069
申请日：2018-07-30
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Idan Goldenberg , Ishai Ilani , Alexander Bazarsky , Rami Rom
Abstract: In an illustrative example, a method includes sensing at least a portion of a representation of a convolutional low-density parity-check (CLDPC) codeword stored at a memory of a data storage device. The method further includes receiving the portion of the representation of the CLDPC codeword at a controller of the data storage device. The method further includes performing one or more management operations associated with the memory based on an estimated number of errors of the portion of the representation of the CLDPC codeword.
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公开(公告)号：US10236909B2
公开(公告)日：2019-03-19
申请号：US15475666
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , Idan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , Idan Alrod , Stella Achtenberg
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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9.发明申请公开(公告)号：US20180287634A1
公开(公告)日：2018-10-04
申请号：US15475602
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , Idan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , Idan Alrod , Stella Achtenberg
CPC classification number: H03M13/118 , G06F3/0619 , G06F3/0655 , G06F3/0688 , G06F11/10 , G06F11/1048 , H03M13/1102 , H03M13/1125 , H03M13/116 , H03M13/3715 , H03M13/616 , H03M13/6516 , H03M13/6566
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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