- 专利标题: Layer-forming device and layer-forming method
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申请号: US14770782申请日: 2014-02-21
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公开(公告)号: US10246776B2公开(公告)日: 2019-04-02
- 发明人: Yasunari Mori , Naomasa Miyatake , Nozomu Hattori
- 申请人: Mitsui Engineering & Shipbuilding Co., Ltd.
- 申请人地址: JP Tokyo
- 专利权人: MITSUI E&S MACHINERY CO., LTD
- 当前专利权人: MITSUI E&S MACHINERY CO., LTD
- 当前专利权人地址: JP Tokyo
- 代理机构: Global IP Counselors, LLP
- 优先权: JP2013-039726 20130228
- 国际申请: PCT/JP2014/054176 WO 20140221
- 国际公布: WO2014/132891 WO 20140904
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23F1/00 ; H01L21/306 ; C23C16/455 ; H01J37/32 ; C23C16/54
摘要:
A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall. The plurality of injectors are sandwiched between the space-partitioning wall and the feeding pathway, such that each of the injectors is sandwiched between two adjacent through-holes from both sides of the two through-holes in the feeding direction, and the layer-forming gas is supplied toward the substrate through a layer-forming gas supply port.
公开/授权文献
- US20160002785A1 LAYER-FORMING DEVICE AND LAYER-FORMING METHOD 公开/授权日:2016-01-07
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