Invention Grant
- Patent Title: C12A7 electride thin film fabrication method and C12A7 electride thin film
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Application No.: US14567047Application Date: 2014-12-11
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Publication No.: US10249402B2Publication Date: 2019-04-02
- Inventor: Hideo Hosono , Yoshitake Toda , Katsuro Hayashi , Setsuro Ito , Satoru Watanabe , Naomichi Miyakawa , Toshinari Watanabe , Kazuhiro Ito
- Applicant: TOKYO INSTITUTE OF TECHNOLOGY , ASAHI GLASS COMPANY, LIMITED , JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Meguro-ku JP Chiyoda-ku JP Kawaguchi-shi
- Assignee: TOKYO INSTITUTE OF TECHNOLOGY,AGC Inc.,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: TOKYO INSTITUTE OF TECHNOLOGY,AGC Inc.,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: JP Meguro-ku JP Chiyoda-ku JP Kawaguchi-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-139197 20120620; JP2012-151848 20120705; JP2013-037851 20130227; JP2013-071154 20130329; JP2013-071163 20130329
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01B1/08 ; C23C14/08 ; C23C14/35 ; C04B35/44 ; C04B35/626 ; H01L51/52
Abstract:
A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.
Public/Granted literature
- US20150093583A1 C12A7 ELECTRIDE THIN FILM FABRICATION METHOD AND C12A7 ELECTRIDE THIN FILM Public/Granted day:2015-04-02
Information query
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