Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15169002Application Date: 2016-05-31
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Publication No.: US10249606B2Publication Date: 2019-04-02
- Inventor: Teruo Suzuki
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2015-123990 20150619
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L27/02

Abstract:
A semiconductor device includes: a first domain including a first high power source line, a first low power source line, and a first power clamp circuit; a second domain including a second high power source line, a second low power source line, and a second power clamp circuit; a third power clamp circuit provided between the second high power source line and the first low power source line; a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line.
Public/Granted literature
- US20160372453A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-22
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