- 专利标题： Semiconductor device
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申请号： US15935324申请日： 2018-03-26
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公开(公告)号： US10249768B2公开(公告)日： 2019-04-02
- 发明人: Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2014-022871 20140207; JP2014-022872 20140207; JP2014-051131 20140314; JP2014-051136 20140314
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786 ; H01L27/12
摘要：
The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.
公开/授权文献
- US20180219102A1 SEMICONDUCTOR DEVICE 公开/授权日：2018-08-02
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