公开(公告)号：US10763282B2

公开(公告)日：2020-09-01

申请号：US16522912

申请日：2019-07-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US10147780B2

公开(公告)日：2018-12-04

申请号：US15290085

申请日：2016-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki Nakamura ,  Kohei Yokoyama ,  Yasuhiro Jinbo ,  Toshiki Sasaki ,  Masataka Nakada ,  Naoto Goto ,  Takahiro Iguchi

IPC: H01L27/32 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1368 ,  H01L27/12

Abstract: A novel display device that is highly convenient with low power consumption is provided. The display device includes a display element including a liquid crystal layer, a display element including a light-emitting layer, and a pixel circuit. Electrodes of the display element including the liquid crystal layer and the display element including the light-emitting layer are electrically connected to the pixel circuit. The electrode of the display element including the liquid crystal layer includes a reflective film including an opening. The pixel circuit includes a transistor including a semiconductor film. The number of insulating films in a region overlapping with the opening is smaller than that of insulating films overlapping with the semiconductor film. In addition, the display element including the light-emitting layer includes two light-emitting elements. The number of optical elements overlapping with one light-emitting element is smaller than that of optical elements overlapping with the other light-emitting element.

公开(公告)号：US10043858B2

公开(公告)日：2018-08-07

申请号：US15496292

申请日：2017-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Yasuharu Hosaka ,  Yukinori Shima ,  Masataka Nakada

IPC: G02F1/1368 ,  H01L27/32 ,  G02F1/1362 ,  H01L51/50 ,  G02F1/1335 ,  H01L51/52 ,  G02F1/1343 ,  G02F1/1333 ,  H01L29/786

Abstract: A novel display device that is highly convenient or reliable is provided. The display device includes a first display element, a second display element, a first transistor, a second transistor, and a third transistor. The first display element includes a liquid crystal layer. The second display element includes a light-emitting layer. The first transistor has a function of selecting the first display element. The second transistor has a function of selecting the second display element. The third transistor has a function of controlling the driving of the second display element. The first transistor and the second transistor are formed over the same surface. The third transistor is formed above the first transistor and the second transistor and includes one of a source electrode and a drain electrode of the second transistor as a gate electrode.

公开(公告)号：US09773815B2

公开(公告)日：2017-09-26

申请号：US15477646

申请日：2017-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Masataka Nakada

IPC: H01L21/469 ,  H01L29/786 ,  H01L21/34 ,  H01L21/36 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

公开(公告)号：US09666605B2

公开(公告)日：2017-05-30

申请号：US15220430

申请日：2016-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama ,  Masataka Nakada

IPC: H01L29/08 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/49

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US09530894B2

公开(公告)日：2016-12-27

申请号：US14615031

申请日：2015-02-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

Abstract translation: 提供了包括其中导通电流高的氧化物半导体的半导体器件。 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 设置在驱动电路部分的第一晶体管包括设置氧化物半导体膜的两个栅电极。

公开(公告)号：US09502440B2

公开(公告)日：2016-11-22

申请号：US14983822

申请日：2015-12-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Hidenori Mori ,  Hisashi Ohtani

IPC: G02F1/136 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/417 ,  H01L29/786 ,  G02F1/1362

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/136218 ,  H01L29/41733 ,  H01L29/78618

Abstract: A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer.

Abstract translation: 提供能够出色的反射显示的新颖的显示装置。 显示装置包括晶体管，其包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的半导体层以及栅极绝缘层和半导体层上的源电极层和漏电极层 ; 与源电极层和漏电极层在同一平面上的反射电极层; 着色层与反射电极层重叠; 与着色层重叠的像素电极层; 以及连接到源极电极层和漏极电极层之一的抗氧化导电层。 像素电极层通过抗氧化导电层与晶体管连接。

公开(公告)号：US09245907B2

公开(公告)日：2016-01-26

申请号：US14217585

申请日：2014-03-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Hidenori Mori ,  Hisashi Ohtani

IPC: G02F1/136 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/136218 ,  H01L29/41733 ,  H01L29/78618

Abstract: A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer.

公开(公告)号：US11557697B2

公开(公告)日：2023-01-17

申请号：US17405547

申请日：2021-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC: H01L33/44 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

公开(公告)号：US11069816B2

公开(公告)日：2021-07-20

申请号：US16635295

申请日：2018-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori Shima ,  Masataka Nakada ,  Masayoshi Dobashi ,  Kenichi Okazaki

IPC: G02F1/1333 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/1345 ,  G02F1/1343

Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a first conductive layer, and a second conductive layer. The second semiconductor layer is positioned over the first semiconductor layer, the second conductive layer is positioned on the second semiconductor layer, and the second insulating layer is provided so as to cover a top surface and a side surface of the second conductive layer. The second conductive layer and the second insulating layer include a first opening, and the third semiconductor layer is provided in contact with a top surface of the second insulating layer, a side surface of the first opening, and the second semiconductor layer. The first insulating layer is positioned between the first conductive layer and the third semiconductor layer, the third insulating layer is positioned between the first insulating layer and the first conductive layer, and the fourth insulating layer is provided so as to surround the first conductive layer.