Invention Grant
- Patent Title: Light emitting diode chip and fabrication method
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Application No.: US15658375Application Date: 2017-07-24
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Publication No.: US10249789B2Publication Date: 2019-04-02
- Inventor: Jiansen Zheng , Su-Hui Lin , Chen-Ke Hsu , Chih-Wei Chao
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN201310747994 20131231
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/14 ; H01L33/44 ; H01L33/38

Abstract:
A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.
Public/Granted literature
- US20170324002A1 Light Emitting Diode Chip and Fabrication Method Public/Granted day:2017-11-09
Information query
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