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公开(公告)号：US10249789B2
公开(公告)日：2019-04-02
申请号：US15658375
申请日：2017-07-24
Inventor： Jiansen Zheng , Su-Hui Lin , Chen-Ke Hsu , Chih-Wei Chao
Abstract: A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.
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公开(公告)号：US10825957B1
公开(公告)日：2020-11-03
申请号：US16887877
申请日：2020-05-29
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.
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Patent Agency Ranking
公开(公告)号：US20190115511A1
公开(公告)日：2019-04-18
申请号：US16147604
申请日：2018-09-29
Inventor： Su-Hui Lin , Lingyuan Hong , SHENG-HSIEN HSU , Sihe CHEN , Dazhong CHEN , Gong CHEN , CHIA-HUNG CHANG , KANG-WEI PENG
Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.
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公开(公告)号：US09825203B2
公开(公告)日：2017-11-21
申请号：US15186487
申请日：2016-06-19
Inventor： Jiansen Zheng , Su-Hui Lin , Chen-Ke Hsu , Chih-Wei Chao
CPC classification number: H01L33/24 , H01L33/14 , H01L33/145 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0033
Abstract: A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serves as current blocking layer; a current spreading layer covering the surface of the light transmission layer and the surface of an epitaxial layer of a non-mask light transmission layer. As the refractive index of the light transmission layer is between those of the epitaxial layer and the hole, indicating a difference of refractive index between the light transmission layer and the epitaxial layer, the probability of scattering generated when light from a luminescent layer emits upwards can be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.
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公开(公告)号：US20240413291A1
公开(公告)日：2024-12-12
申请号：US18811718
申请日：2024-08-21
Inventor： Su-Hui Lin , Lingyuan Hong , SHENG-HSIEN HSU , Sihe CHEN , Dazhong CHEN , Gong CHEN , CHIA-HUNG CHANG , KANG-WEI PENG
Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.
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公开(公告)号：US12294037B2
公开(公告)日：2025-05-06
申请号：US17450630
申请日：2021-10-12
Inventor： Gong Chen , Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Ling-Yuan Hong , Minyou He , Chia-Hung Chang
Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.
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公开(公告)号：US10707380B2
公开(公告)日：2020-07-07
申请号：US16147763
申请日：2018-09-30
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
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