Invention Grant
- Patent Title: Method for compensating effects of substrate stresses in semiconductor devices, and corresponding device
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Application No.: US15437868Application Date: 2017-02-21
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Publication No.: US10250233B2Publication Date: 2019-04-02
- Inventor: Giuseppe Scilla
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Crowe & Dunlevy
- Priority: IT102016000077188 20160722
- Main IPC: H03K3/011
- IPC: H03K3/011 ; G01L1/00 ; G01R17/12 ; H01L23/34 ; G01B7/16 ; H01L21/66

Abstract:
A semiconductor substrate includes a first portion and a second portion. The first portion of the substrate has a first deformation-stress sensor capable of supplying a first stress signal. The second portion of the substrate has a second deformation-stress sensor capable of supplying a second stress signal. The first stress signal and second stress signal are processed by a circuit to produce a compensation signal. The compensation signal is applied in feedback to one of the first and second stress signals to compensate for variations induced in said one of the first and second stress signals by stresses in the semiconductor substrate.
Public/Granted literature
- US20180026609A1 METHOD FOR COMPENSATING EFFECTS OF SUBSTRATE STRESSES IN SEMICONDUCTOR DEVICES, AND CORRESPONDING DEVICE Public/Granted day:2018-01-25
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