- 专利标题: Defect inspecting method and defect inspecting apparatus
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申请号: US15806937申请日: 2017-11-08
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公开(公告)号: US10254235B2公开(公告)日: 2019-04-09
- 发明人: Toshiyuki Nakao , Shigenobu Maruyama , Akira Hamamatsu , Yuta Urano
- 申请人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Baker Botts L.L.P.
- 优先权: JP2009-045857 20090227
- 主分类号: G01N21/00
- IPC分类号: G01N21/00 ; G01N21/95 ; G01N21/88 ; H01L21/66
摘要:
A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.
公开/授权文献
- US20180067060A1 DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS 公开/授权日:2018-03-08
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