Invention Grant
- Patent Title: Method and device for short circuit detection in power semiconductor switches
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Application No.: US15058632Application Date: 2016-03-02
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Publication No.: US10254327B2Publication Date: 2019-04-09
- Inventor: Anton Mauder , Stefan Hain , Mark-Matthias Bakran
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Muprhy, Bilak & Homiller, PLLC
- Main IPC: G05F1/573
- IPC: G05F1/573 ; G01R31/02 ; H03K17/082 ; G01R31/327 ; G01R31/27 ; H03K17/0812 ; G01R31/42
Abstract:
Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.
Public/Granted literature
- US20170248646A1 Method and Device for Short Circuit Detection in Power Semiconductor Switches Public/Granted day:2017-08-31
Information query
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