公开(公告)号：US11843368B2

公开(公告)日：2023-12-12

申请号：US18060639

申请日：2022-12-01

Applicant: Infineon Technologies AG

Inventor： Zheming Li ,  Mark-Matthias Bakran ,  Daniel Domes ,  Robert Maier ,  Franz-Josef Niedernostheide

IPC: H03K17/04 ,  H03K17/042 ,  H03K5/24

CPC classification number: H03K17/04206 ,  H03K5/24 ,  H03K17/042 ,  H03K17/0406

Abstract: A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

公开(公告)号：US11031929B1

公开(公告)日：2021-06-08

申请号：US16943318

申请日：2020-07-30

Applicant: Infineon Technologies AG

Inventor： Robert Maier ,  Mark-Matthias Bakran ,  Daniel Domes ,  Zheming Li ,  Franz-Josef Niedernostheide

IPC: H03K17/042 ,  H03K17/687 ,  H03K17/95

Abstract: A method of driving a transistor includes generating an off-current during a plurality of turn-off switching events to control a gate voltage at a gate terminal of the transistor, wherein generating the off-current includes sinking a first portion of the off-current from the gate terminal to discharge a first portion of the gate voltage, and sinking, during a boost interval, a second portion of the off-current from the gate terminal to discharge a second portion of the gate voltage; measuring a transistor parameter indicative of an oscillation of a drain-source voltage of the transistor for a first turn-off switching event during which the transistor is transitioned off; activating the first portion of the off-current for a second turn-off switching event; and activating the second portion of the off-current for the second turn-off switching event, including regulating a length of the boost interval based on the measured transistor parameter.

公开(公告)号：US11876509B1

公开(公告)日：2024-01-16

申请号：US17875876

申请日：2022-07-28

Applicant: Infineon Technologies AG

Inventor： Guang Zeng ,  Franz-Josef Niedernostheide ,  Mark-Matthias Bakran ,  Zheming Li

IPC: H03K17/00 ,  H03K17/16 ,  H03K17/687

CPC classification number: H03K17/166 ,  H03K17/168 ,  H03K17/687 ,  H03K2217/0027

Abstract: A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

公开(公告)号：US11595035B1

公开(公告)日：2023-02-28

申请号：US17458942

申请日：2021-08-27

Applicant: Infineon Technologies AG

Inventor： Zheming Li ,  Mark-Matthias Bakran ,  Daniel Domes ,  Robert Maier ,  Franz-Josef Niedernostheide

IPC: H03K17/04 ,  H03K17/042 ,  H03K5/24

Abstract: A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor that are switched in a complementary manner. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

公开(公告)号：US10254327B2

公开(公告)日：2019-04-09

申请号：US15058632

申请日：2016-03-02

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Stefan Hain ,  Mark-Matthias Bakran

IPC: G05F1/573 ,  G01R31/02 ,  H03K17/082 ,  G01R31/327 ,  G01R31/27 ,  H03K17/0812 ,  G01R31/42

Abstract: Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.

公开(公告)号：US20170248645A1

公开(公告)日：2017-08-31

申请号：US15056111

申请日：2016-02-29

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Stefan Hain ,  Mark-Matthias Bakran

IPC: G01R31/02 ,  G01R17/00

CPC classification number: G01R31/3277 ,  G01R31/27 ,  G01R31/42 ,  H03K17/08128 ,  H03K17/0828

Abstract: Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.

公开(公告)号：US12088283B2

公开(公告)日：2024-09-10

申请号：US18350790

申请日：2023-07-12

Applicant: Infineon Technologies AG

Inventor： Zheming Li ,  Mark-Matthias Bakran ,  Daniel Domes ,  Robert Maier ,  Franz-Josef Niedernostheide

IPC: H03K17/042 ,  H03K17/04

CPC classification number: H03K17/0406 ,  H03K17/042 ,  H03K17/04206 ,  H03K2217/0027

Abstract: A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to control a gate voltage to generate an on-current during a plurality of turn-on switching events to turn on the transistor. The gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage, and a second driver configured to, during a boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage. A control circuit measures a transistor parameter representative of a reverse recovery current of the transistor for a turn-on switching event during which the transistor is transitioned to an on state and controls the first driver and controls the second driver based on the measured transistor parameter.

公开(公告)号：US11770119B2

公开(公告)日：2023-09-26

申请号：US17852785

申请日：2022-06-29

Applicant: Infineon Technologies AG

Inventor： Zheming Li ,  Mark-Matthias Bakran ,  Daniel Domes ,  Robert Maier ,  Franz-Josef Niedernostheide

IPC: H03K17/042 ,  H03K17/04

CPC classification number: H03K17/0406 ,  H03K17/042 ,  H03K17/04206 ,  H03K2217/0027

Abstract: A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter.

公开(公告)号：US11444613B1

公开(公告)日：2022-09-13

申请号：US17372913

申请日：2021-07-12

Applicant: Infineon Technologies AG

Inventor： Zheming Li ,  Mark-Matthias Bakran ,  Daniel Domes ,  Robert Maier ,  Franz-Josef Niedernostheide

IPC: H03K17/04 ,  H03K17/042

Abstract: A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter.

公开(公告)号：US20170248646A1

公开(公告)日：2017-08-31

申请号：US15058632

申请日：2016-03-02

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Stefan Hain ,  Mark-Matthias Bakran

IPC: G01R31/02 ,  H03K17/082

CPC classification number: G01R31/025 ,  G01R31/27 ,  G01R31/3277 ,  G01R31/42 ,  G05F1/573 ,  H03K17/08128 ,  H03K17/0826 ,  H03K17/0828

Abstract: Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.