Invention Grant
- Patent Title: Semiconductor processing systems having multiple plasma configurations
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Application No.: US13791074Application Date: 2013-03-08
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Publication No.: US10256079B2Publication Date: 2019-04-09
- Inventor: Dmitry Lubomirsky , Xinglong Chen , Shankar Venkataraman
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32 ; H01L21/3213 ; C23C16/54 ; C23C16/455 ; C23C16/505 ; H01L21/67

Abstract:
An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.
Public/Granted literature
- US20140227881A1 SEMICONDUCTOR PROCESSING SYSTEMS HAVING MULTIPLE PLASMA CONFIGURATIONS Public/Granted day:2014-08-14
Information query
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