Invention Grant
- Patent Title: Replacement contact cuts with an encapsulated low-K dielectric
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Application No.: US15626732Application Date: 2017-06-19
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Publication No.: US10256089B2Publication Date: 2019-04-09
- Inventor: Huy Cao , Haigou Huang , Jinsheng Gao , Tai Fong Chao
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/02 ; H01L21/768 ; H01L21/28

Abstract:
Interconnect structures and methods of forming an interconnect structure. A sacrificial contact is arranged between a first gate structure and a second gate structure. The sacrificial contact extends vertically to a source/drain region. A section of the sacrificial contact is removed to form a cut opening extending vertically to the source/drain region. A first dielectric layer is deposited in the cut opening, and is then partially removed to open a space in the cut opening that is arranged vertically above the first dielectric layer. A second dielectric layer is deposited that fills the space in the cut opening and forms a cap on the first dielectric layer. The first dielectric layer has a first dielectric constant, and the second dielectric layer has a second dielectric constant that is greater than the first dielectric constant.
Public/Granted literature
- US20180366324A1 REPLACEMENT CONTACT CUTS WITH AN ENCAPSULATED LOW-K DIELECTRIC Public/Granted day:2018-12-20
Information query
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