Invention Grant
- Patent Title: Film thickness measuring method, film thickness measuring apparatus, polishing method, and polishing apparatus
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Application No.: US15564182Application Date: 2016-04-05
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Publication No.: US10256104B2Publication Date: 2019-04-09
- Inventor: Toshifumi Kimba
- Applicant: EBARA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: EBARA CORPORATION
- Current Assignee: EBARA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker & Hostetler LLP
- Priority: JP2015-079459 20150408
- International Application: PCT/JP2016/061100 WO 20160405
- International Announcement: WO2016/163352 WO 20161013
- Main IPC: G01B11/28
- IPC: G01B11/28 ; H01L21/304 ; B24B37/013 ; B24B49/04 ; B24B49/12 ; G01B11/06 ; B24B37/10 ; B24B37/20 ; H01L21/66

Abstract:
The present invention relates to a film-thickness measuring method for detecting a film thickness by analyzing optical information contained in a reflected light from a substrate. The film-thickness measuring method includes producing a spectral waveform indicating a relationship between intensity and wavelength of reflected light from a substrate; performing Fourier transform processing on the spectral waveform to determine strengths of frequency components and corresponding film thicknesses; determining local maximum values (M1, M2) of the strengths of the frequency components; and selecting, according to a preset selection rule, one film thickness from film thicknesses (t1, t2) corresponding respectively to the local maximum values (M1, M2). The selection rule is either to select an N-th largest film thickness or to select an N-th smallest film thickness, and N is a predetermined natural number.
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