Exemplary methods for removing tungsten-containing material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing methane into the processing region of the semiconductor processing chamber. The methods may include forming a plasma from the chlorine-containing precursor and the methane to produce plasma effluents. The methods may also include contacting a substrate with the plasma effluents. The substrate may include an exposed region of a tungsten-containing material. The plasma effluents may produce an oxychloride of tungsten. The methods may also include recessing the exposed region of the tungsten-containing material.