公开(公告)号：US20240425976A1

公开(公告)日：2024-12-26

申请号：US18338017

申请日：2023-06-20

Applicant: Dickinson Corporation

Inventor： Matthew Bishop ,  Abhay V. Thomas ,  David Andrew Brill

IPC: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/01 ,  C23C16/46 ,  C23C16/56

Abstract: A method of synthesizing a perimorphic framework by chemical vapor deposition of a perimorph around an oxyanionic template, followed by dissolution of the oxyanionic template in water or in an aqueous weak acid comprising an oxyanion.

公开(公告)号：US12159781B2

公开(公告)日：2024-12-03

申请号：US17907517

申请日：2021-01-12

Applicant: Soitec

Inventor： Hugo Biard

IPC: C30B25/18 ,  C23C14/48 ,  C23C16/01 ,  C23C16/32 ,  C30B1/02 ,  C30B29/36 ,  C30B31/22 ,  C30B33/10 ,  H01L21/02

Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline silicon carbide, b) a step of ion implantation of light species into the donor substrate, to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free surface of the donor substrate, c) a succession of n steps of forming crystalline carrier layers, with n greater than or equal to 2; the n crystalline carrier layers being positioned on the front face of the donor substrate successively one on the other, and forming the carrier substrate; each formation step comprising: direct liquid injection chemical vapor deposition, at a temperature below 900° C., to form a carrier layer, the carrier layer being formed by an at least partially amorphous SiC matrix, and having a thickness of less than or equal to 200 microns; a crystallization heat treatment of the carrier layer, at a temperature of less than or equal to 1000° C., to form a crystalline carrier layer; d) a step of separation along the buried brittle plane, to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the rest of the donor substrate.

公开(公告)号：US11976354B2

公开(公告)日：2024-05-07

申请号：US17637064

申请日：2020-12-29

Applicant: BOCHVAR HIGH-TECHNOLOGY RESEARCH INSTITUTE FOR INORGANIC MATERIALS

Inventor： Leonid Aleksandrovich Karpyuk ,  Vladislav Konstantinovich Orlov ,  Sergey Igorevich Ivanov ,  Alexey Vladimirovich Glebov ,  Fyodor Viktorovich Makarov ,  Roman Gennadyevich Zakharov ,  Ivan Alexandrovich Dzyubinsky ,  Alexander Pavlovich Ponomarenko ,  Alexander Dmitrievich Bagdatyev

IPC: C23C16/32 ,  C04B41/00 ,  C04B41/45 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C23C16/01 ,  C23C16/26 ,  D04C1/02 ,  D04C1/12 ,  G21C3/07

CPC classification number: C23C16/325 ,  C04B41/009 ,  C04B41/4531 ,  C04B41/5001 ,  C04B41/5059 ,  C04B41/522 ,  C04B41/87 ,  C23C16/01 ,  C23C16/26 ,  D04C1/02 ,  D04C1/12 ,  G21C3/07 ,  D10B2101/16 ,  D10B2505/02 ,  Y10T29/49982

Abstract: The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

公开(公告)号：US11560314B2

公开(公告)日：2023-01-24

申请号：US16959130

申请日：2018-12-27

Applicant: LOG 9 MATERIALS SCIENTIFIC PRIVATE LIMITED

Inventor： Akshay Vivek Singhal ,  Anshul Kumar Sharma

IPC: C23C16/26 ,  C01B32/186 ,  C23C16/01 ,  C23C16/40 ,  C23C16/56 ,  B82Y30/00 ,  B82Y40/00

Abstract: The embodiments herein provide a system and a method for the synthesis of Graphene Quantum Dots (GQDs) for use in applications like nano-electronics, photonics, bio-imaging, energy storage, quantum computing, etc. Cu substrate is placed inside the CVD tube, and the CVD Chamber is sealed. The process parameters for CVD process are set up. Precursor gases injected inside the tube are dissociate to form carbon dimers and trimmers. Upon cooling semi-cyrstalline carbon film deposits inside the CVD tube. Oxidizing gas mixture is injected to convert amorphous C in semi-cyrstalline carbon film to CO2/CO. Graphene Quantum Dots (GQDs) so formed are carried with the gas flow and deposited at the cooler end of tube. The scrapper assembly is inserted in the CVD Tube and the reagent is sprayed inside the tube to disperse these GQDs in the reagent. This dispersion is pumped out of the CVD Chamber.

公开(公告)号：US20220356564A1

公开(公告)日：2022-11-10

申请号：US17637064

申请日：2020-12-29

Applicant: BOCHVAR HIGH-TECHNOLOGY RESEARCHI NSTITUTE FOR INORGANIC MATERIALS

Inventor： Leonid Aleksandrovich KARPYUK ,  Vladislav Konstantinovich ORLOV ,  Sergey Igorevich IVANOV ,  Alexey Vladimirovich GLEBOV ,  Fyodor Viktorovich MAKAROV ,  Roman Gennadyevich ZAKHAROV ,  Ivan Alexandrovich DZYUBINSKY ,  Alexander Pavlovich PONOMARENKO ,  Alexander Dmitrievich BAGDATYEV

IPC: C23C16/32 ,  C23C16/26 ,  C23C16/01 ,  G21C3/07 ,  D04C1/02 ,  D04C1/12 ,  C04B41/00 ,  C04B41/50 ,  C04B41/45 ,  C04B41/52 ,  C04B41/87

Abstract: The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

公开(公告)号：US11447391B2

公开(公告)日：2022-09-20

申请号：US15189545

申请日：2016-06-22

Applicant: POLYVALOR, LIMITED PARTNERSHIP ,  VALORISATION-RECHERCHE, LIMITED PARTNERSHIP

Inventor： Saman Choubak ,  Pierre Lévesque ,  Philippe Gagnon ,  Richard Martel ,  Patrick Desjardins

IPC: C01B32/182 ,  C01B32/162 ,  C23C16/26 ,  C23C16/01 ,  C23C16/455 ,  B01J23/72 ,  B01J23/745 ,  B01J37/06 ,  B01J23/75 ,  B01J37/08 ,  B01J23/755 ,  C01B32/186

Abstract: A method of growing a graphene coating or carbon nanotubes on a catalytic substrate by chemical vapor deposition is provided. In the method, the chemical vapor deposition is carried out in an atmosphere in which a ratio Pox/Pred is about 5×10−26 or less, wherein Pox is the partial pressure oxidizing species in the atmosphere and Pred is the partial pressure of reducing species in the atmosphere. A catalytic substrate coated with a graphene coating grown according to this method is also provided.

公开(公告)号：US20220267894A1

公开(公告)日：2022-08-25

申请号：US17741008

申请日：2022-05-10

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Takuji Okahisa ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Natsuo Tatsumi

IPC: C23C16/01 ,  C23C16/27 ,  C30B29/04 ,  C23C16/56 ,  C23C16/02 ,  C01B32/25 ,  H01L21/762 ,  C30B33/06 ,  C01B32/26 ,  C23C14/48 ,  C30B25/20 ,  C30B33/02 ,  C30B33/10

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

公开(公告)号：US20220171279A1

公开(公告)日：2022-06-02

申请号：US17432852

申请日：2020-02-21

Applicant: AIR WATER INC.

Inventor： Hidehiko OKU ,  Kei MIHARA ,  Ichiro HIDE

IPC: G03F1/64 ,  C23C16/32 ,  C23C16/01

Abstract: A pellicle intermediary body has a Si substrate, a Si oxide film formed on a surface of the Si substrate, and a Si layer formed on a surface of the Si oxide film. The Si layer includes a low COP (Crystal Originated Particle) portion which is a part where the number of COPs decreases as it approaches the surface of the Si layer and is formed in the part that constitutes the surface of the Si layer. A pellicle intermediary body, a pellicle, a method for manufacturing a pellicle intermediary body, and a pellicle manufacturing method that can improve the quality of the pellicle film are provided.

公开(公告)号：US20220154334A1

公开(公告)日：2022-05-19

申请号：US17541681

申请日：2021-12-03

Applicant: THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

Inventor： Igor Bargatin ,  Keivan Davami

IPC: C23C16/455 ,  C23C16/01 ,  C23C16/12 ,  C23C16/50 ,  H01J37/32

Abstract: A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

公开(公告)号：US11313037B2

公开(公告)日：2022-04-26

申请号：US16750753

申请日：2020-01-23

Applicant: II-VI Delaware, Inc.

Inventor： Wen-Qing Xu ,  Chao Liu ,  Giovanni Barbarossa ,  Thomas E. Anderson ,  Elgin E. Eissler

IPC: C23C16/27 ,  C23C16/01 ,  C23C16/02 ,  C23C16/56

Abstract: A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)≤100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.