Invention Grant
- Patent Title: Thin film transistor, a method of manufacturing the same, and a display apparatus including the same
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Application No.: US15379602Application Date: 2016-12-15
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Publication No.: US10256256B2Publication Date: 2019-04-09
- Inventor: Sun Park , Chungi You , Hyuksoon Kwon
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2016-0062171 20160520
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L29/786 ; H01L29/66
Abstract:
A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.
Public/Granted literature
- US20170338245A1 THIN FILM TRANSISTOR, A METHOD OF MANUFACTURING THE SAME, AND A DISPLAY APPARATUS INCLUDING THE SAME Public/Granted day:2017-11-23
Information query
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