Invention Grant
- Patent Title: Method for oxidizing a substrate surface using oxygen
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Application No.: US15802425Application Date: 2017-11-02
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Publication No.: US10256290B2Publication Date: 2019-04-09
- Inventor: Pekka Laukkanen , Jouko Lang , Marko Punkkinen , Marjukka Tuominen , Veikko Tuominen , Johnny Dahl , Juhani Vayrynen
- Applicant: Comptek Solutions Oy
- Applicant Address: FI Lieto
- Assignee: Comptek Solutions Oy
- Current Assignee: Comptek Solutions Oy
- Current Assignee Address: FI Lieto
- Agent James C. Lydon
- Priority: FI20106181 20101111
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/02 ; H01L21/28 ; H01L21/316 ; H01L29/10 ; H01L29/20 ; H01L29/205 ; H01L21/324 ; H01L29/201
Abstract:
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
Public/Granted literature
- US20180069074A1 METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE Public/Granted day:2018-03-08
Information query
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