Invention Grant
- Patent Title: High doped III-V source/drain junctions for field effect transistors
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Application No.: US15890880Application Date: 2018-02-07
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Publication No.: US10256304B2Publication Date: 2019-04-09
- Inventor: Xiuyu Cai , Qing Liu , Kejia Wang , Ruilong Xie , Chun-Chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GlobalFoundries, Inc. , STMicroelectronics, Inc.
- Applicant Address: US NY Armonk US TX Coppell KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk US TX Coppell KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/41 ; H01L29/66 ; H01L21/306 ; H01L29/20 ; H01L29/417
Abstract:
A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate including an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.
Public/Granted literature
- US20180175202A1 HIGH DOPED III-V SOURCE/DRAIN JUNCTIONS FOR FIELD EFFECT TRANSISTORS Public/Granted day:2018-06-21
Information query
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