Invention Grant
- Patent Title: Methods of forming thin film and fabricating integrated circuit device using niobium compound
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Application No.: US15363088Application Date: 2016-11-29
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Publication No.: US10259836B2Publication Date: 2019-04-16
- Inventor: Jae-soon Lim , Gyu-hee Park , Youn-joung Cho , Clement Lansalot , Won-tae Noh , Julien Lieffrig , Joo-ho Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , L'Air Liquide, Societe Anonyme Pour L'etude et L'exploitation des Procedes Georges Claude
- Applicant Address: KR Suwon-Si, Gyeonggi-do FR Paris
- Assignee: Samsung Electronics Co., Ltd.,L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
- Current Assignee: Samsung Electronics Co., Ltd.,L'Air Liquide, Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do FR Paris
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0169058 20151130
- Main IPC: C23C16/28
- IPC: C23C16/28 ; C07F17/00 ; C09D5/24 ; H01L21/02 ; H01L21/28 ; H01L21/285 ; H01L27/108 ; H01L49/02 ; H01L29/49 ; H01L29/51 ; H01L29/66
Abstract:
A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L) Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is a formamidinate, an amidinate, or a guanidinate.
Public/Granted literature
- US20170152277A1 METHODS OF FORMING THIN FILM AND FABRICATING INTEGRATED CIRCUIT DEVICE USING NIOBIUM COMPOUND Public/Granted day:2017-06-01
Information query
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